Photoluminescence from Ge+-implanted SiO2 films on Si substrate and its mechanism

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Bibliographic Details
Published in:Physics letters. A 1997-07, Vol.232 (3-4), p.321-325
Main Authors: Gao, T., Bao, X.M., Yan, F., Tong, S.
Format: Article
Language:English
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ISSN:0375-9601
DOI:10.1016/S0375-9601(97)00387-3