Spin-glass phase in the ensemble of amphoteric impurities in a semiconductor

The transition to the spin-glass phase at T = 0 has been found for a two-dimensional ensemble of amphoteric impurities with charge transfer. The characteristics of the charge clustering found in specimens at low temperatures have been investigated. The finite size scaling with the critical exponents...

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Bibliographic Details
Published in:Physics letters. A 1998, Vol.244 (5), p.437-441
Main Authors: Likhachev, V.N., Onishchouk, V.A.
Format: Article
Language:English
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Summary:The transition to the spin-glass phase at T = 0 has been found for a two-dimensional ensemble of amphoteric impurities with charge transfer. The characteristics of the charge clustering found in specimens at low temperatures have been investigated. The finite size scaling with the critical exponents v = 0.95 ± 0.05, η = 0.75 ± 0.05 has been found for the spin-glass susceptibility χSG ( L, T) and Binder parameter g( L, T).
ISSN:0375-9601
1873-2429
DOI:10.1016/S0375-9601(98)00310-7