Load-dependent electronic states at the crack tip in a semiconductor

Stress concentration at the crack tip in a brittle semiconductor gives rise to load-dependent electronic states localized at the crack tip. They either split out downwards from the bottom of a conductivity band or upward from the top of a valence band giving rise to a crack tip charging. Being occup...

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Bibliographic Details
Published in:Physics letters. A 1998-07, Vol.243 (5), p.345-350
Main Authors: Boulbitch, A.A, Fisenko, A.V
Format: Article
Language:English
Subjects:
Crack tip
Electronic structure
Fracture toughness
Process zone
Semiconductor
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Summary:Stress concentration at the crack tip in a brittle semiconductor gives rise to load-dependent electronic states localized at the crack tip. They either split out downwards from the bottom of a conductivity band or upward from the top of a valence band giving rise to a crack tip charging. Being occupied, they decrease fracture toughness and fracture energy.
ISSN:0375-9601
1873-2429
DOI:10.1016/S0375-9601(98)80120-5