Simulation of growth with diffusion in the kinetic BCSOS model

A simple Monte Carlo simulation of crystal growth, based on a kinetic version of the BCSOS model with diffusion, is discussed as a function of thermodynamic parameters (temperature T and disequilibrium Δμ). Two regimes are studied. In Regime I, close to equilibrium, deposition competes with desorpti...

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Bibliographic Details
Published in:Physica A 1997-04, Vol.238 (1), p.172-180
Main Authors: Levi, Andrea C., Tartaglino, Ugo
Format: Article
Language:English
Subjects:
Epitaxy
Growth modes
Six-vertex model
Surface diffusion
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Summary:A simple Monte Carlo simulation of crystal growth, based on a kinetic version of the BCSOS model with diffusion, is discussed as a function of thermodynamic parameters (temperature T and disequilibrium Δμ). Two regimes are studied. In Regime I, close to equilibrium, deposition competes with desorption. It is shown that this regime splits into two subregimes, Ia and Ib, with very different properties, according to whether a range of coverages where desorption prevails exists or not. In Regime II, far from equilibrium, deposition competes with diffusion: a few significant stochastic properties of the growth process are discussed.
ISSN:0378-4371
1873-2119
DOI:10.1016/S0378-4371(96)00442-6