Transport and optical property measurements in indium intercalated molybdenum diselenide single crystals grown by DVT technique

• Published in: Synthetic metals 2001-08, Vol.123 (1), p.73-81
• Main Authors: Deshpande, M.P., Gupta, S.K., Agarwal, Ajay, Agarwal, M.K.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity of specific materials; Electronic transport in condensed matter; Exact sciences and technology; Indium; Intercalated; Molybdenum diselenide; Optical absorption; Other crystalline inorganic semiconductors; Physics; Single crystals; Transport properties
• ISSN: 0379-6779; 1879-3290
• DOI: 10.1016/S0379-6779(00)00567-1

This paper describes the transport and optical property measurements in indium intercalated MoSe 2 single crystals. The crystals have been grown by a direct vapour transport (DVT) technique. Various transport properties, e.g. room temperature resistivity, high temperature resistivity (perpendicular to c-axis from room temperature to 423 K and parallel to c-axis from room temperature to 773 K), anisotropy ratio, low temperature resistivity (77 K to room temperature), Hall effect measurements, thermo-power measurements have been carried out and the results have been systematically presented. This study has clearly shown that indium intercalated molybdenum diselenide like the host crystal MoSe 2 are n-type semiconductors. Optical absorption studies of the grown crystals have been used to evaluate the energies of the direct band gaps in them. The variation of direct energy gap with amount of indium in In x MoSe 2 has been adequately explained.