Aging induced traps in organic semiconductors

Trap states in organic single layer devices have been detected by the method of thermally stimulated currents (TSC). These devices have been exposed to potentially harmful atmospheres of oxygen and humid nitrogen in order to investigate the influence of ambient atmosphere on the trap spectrum of mat...

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Bibliographic Details
Published in:Synthetic metals 2001-05, Vol.122 (1), p.49-52
Main Authors: Steiger, J., Karg, S., Schmechel, R., von Seggern, H.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Degradation
Electron states
Electronics
Exact sciences and technology
Impurity and defect levels
Optoelectronic devices
Organic light emitting diodes
Other nonmetals
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thermally stimulated currents
Traps
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Summary:Trap states in organic single layer devices have been detected by the method of thermally stimulated currents (TSC). These devices have been exposed to potentially harmful atmospheres of oxygen and humid nitrogen in order to investigate the influence of ambient atmosphere on the trap spectrum of materials used for organic light-emitting diodes. Discrete traps with activation energies of 105 and 140meV have been found in α-NPD (N,N′-di(1-naphthyl)-N,N′-diphenylbenzidin). In 1-NaphDATA (4,4′,4″-Tris(N-2-naphthyl)-N-phenylamino-triphenylamin) discrete trap levels with activation energies of 100 and 235meV are present. The exposure to humidity forms a deep hole trap of 0.5eV in 1-NaphDATA, whereas in α-NPD no new trap was detected. The influence of the so generated traps on the charge transport is demonstrated by I–V characteristics.
ISSN:0379-6779
1879-3290
DOI:10.1016/S0379-6779(00)01359-X