Effect of fullerene doping on electrical and optical properties of poly(disilanyleneoligophenylene)s and poly(disilanyleneoligothienylene)s

Photoluminescence (PL) of poly(disilanyleneoligophenylene) (PDSiOP) and poly(disilanyleneoligothienylene) (PDSiOT) are drastically quenched and photoconduction is remarkably enhanced upon doping of small amount of fullerenes such as C 60. The results are explained by taking the electronic energy sta...

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Bibliographic Details
Published in:Synthetic metals 1999-06, Vol.102 (1), p.963-964
Main Authors: Hirohata, M., Nakayama, H., Sonoda, T., Fujii, A., Ozaki, M., Lee, S., Yoshino, K., Naka, A., Ishikawa, M.
Format: Article
Language:English
Subjects:
Applied sciences
Conducting polymers
Exact sciences and technology
Fullerenes
Inorganic and organomineral polymers
Photoconductivity
Photoluminescence
Physicochemistry of polymers
Properties and characterization
Spin casting
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Summary:Photoluminescence (PL) of poly(disilanyleneoligophenylene) (PDSiOP) and poly(disilanyleneoligothienylene) (PDSiOT) are drastically quenched and photoconduction is remarkably enhanced upon doping of small amount of fullerenes such as C 60. The results are explained by taking the electronic energy states of both PDSiOP and PDSiOT polymers and C 60 into consideration. Effect of C 60, on carrier migration is also discussed. Stability of these polymers is found to increase markedly upon C 60 doping.
ISSN:0379-6779
1879-3290
DOI:10.1016/S0379-6779(98)00998-9