Sub-micron spatial resolution Raman spectroscopy and its application to stress mapping in silicon

Abstract A scanning near-field optical microscope (SNOM) capable of recording Raman spectra with a spatial resolution of150 run has been constructed. The instrument has been used to generate a high resolution Raman map of the region surrounding a scratch in a single crystal silicon wafer. The Raman...

Full description

Saved in:
Bibliographic Details
Published in:Synthetic metals 1999-06, Vol.102 (1), p.1425-1427
Main Authors: Webster, S., Smith, D.A., Batchelder, D.N., Karlin, S.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Near-field scanning optical microscopes
Physics
Scanning probe microscopes, components and techniques
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Abstract A scanning near-field optical microscope (SNOM) capable of recording Raman spectra with a spatial resolution of150 run has been constructed. The instrument has been used to generate a high resolution Raman map of the region surrounding a scratch in a single crystal silicon wafer. The Raman data indicates that the silicon has undergone a phase change during the scratching process. Shifts in the silicon Raman band have been used to map residual stress adjacent to the scratch.
ISSN:0379-6779
1879-3290
DOI:10.1016/S0379-6779(98)01103-5