Film formation of polyacenic semiconductive materials (PAS) by excimer laser ablation

• Published in: Synthetic metals 1999-05, Vol.101 (1-3), p.80-81
• Main Authors: Nishio, S., Narisada, Y., Kuriki, S., Matsuzaki, A., Sato, H., Kinoshita, H., Anekawa, A., Ando, N., Hato, Y., Yata, S., Tanaka, K., Yamabe, T.
• Format: Article
• Language: English
• Subjects: Amorphous thin films; Applied sciences; Exact sciences and technology; Forms of application and semi-finished materials; Graphite and related compounds; Polymer industry, paints, wood; Semiconducting films; Sheets and films; Technology of polymers
• ISSN: 0379-6779; 1879-3290
• DOI: 10.1016/S0379-6779(98)01189-8

Polyacenic semiconductor (PAS) thin films (PAS-F) were prepared onto various substrates at several substrate temperatures (Ts) by excimer laser ablation (ELA) of a bulk phenol-form-aldehyde (PF) resin and/or bulk PAS materials prepared by pyrolysis of the PF resin at several pyrolytic temperatures (Tp) Every PAS-F prepared by ELA was homogeneous dark brown, consisting of fine particles. Remarkable increase of electric conductivities was achieved on increasing Ts during the film formation process for every PAS-F. In particular, the conductivity of the film from PAS with Tp of 935 °C prepared on a substrate at Ts of 300 °C (PASF(935, 300)) reached more than 101Scm−1. Although iodine doping was not possible after film formation process, effective iodine doping during formation process of PAS-F by ELA of PF resin was confirmed. New sharp peaks at 682 and 1906cm−1 related to stretching modes of carbon-iodine and sp carbon-carbon bonds, respectively, are detected in the I2-doped PAS-F.