Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator

Insulated-gate field-effect transistors (IGFETs) comprising molecular beam deposited α,ω-di-hexyl-hexathienylene (DH6T) as the semiconductor layer and different polymeric gate insulators were fabricated and tested. Field-effect mobility values up to 0.13 cm 2 V −1 s −1 were obtained, which are the h...

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Bibliographic Details
Published in:Synthetic metals 1998-01, Vol.92 (1), p.47-52
Main Authors: Dimitrakopoulos, Christos D., Furman, Bruce K., Graham, Teresita, Hegde, Suryanarayan, Purushothaman, Sampath
Format: Article
Language:English
Subjects:
Application fields
Applied sciences
Electronics
Exact sciences and technology
Field-effect transistors
Molecular beam deposition
Polymer industry, paints, wood
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Technology of polymers
Transistors
α,ω-Di-hexyl-hexathienylene
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Summary:Insulated-gate field-effect transistors (IGFETs) comprising molecular beam deposited α,ω-di-hexyl-hexathienylene (DH6T) as the semiconductor layer and different polymeric gate insulators were fabricated and tested. Field-effect mobility values up to 0.13 cm 2 V −1 s −1 were obtained, which are the highest values obtained from thin-film transistors of DH6T.
ISSN:0379-6779
1879-3290
DOI:10.1016/S0379-6779(98)80021-0