Improvement of total reflection X-ray fluorescence analysis of low Z elements on silicon wafer surfaces at the PTB monochromator beamline for undulator radiation at the electron storage ring BESSY II

• Published in: Spectrochimica acta. Part B: Atomic spectroscopy 2001-11, Vol.56 (11), p.2073-2083
• Main Authors: Beckhoff, B, Fliegauf, R, Ulm, G, Pepponi, G, Streli, C, Wobrauschek, P, Fabry, L, Pahlke, S
• Format: Article
• Language: English
• Subjects: Monochromator beamline; Total reflection X-ray fluorescence (TXRF); Undulator radiation
• ISSN: 0584-8547; 1873-3565
• DOI: 10.1016/S0584-8547(01)00320-2

Several different total reflection X-ray fluorescence (TXRF) experiments were conducted at the plane grating monochromator beamline for undulator radiation of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY II, which provides photon energies between 0.1 and 1.9 keV for specimen excitation. The lower limits of detection of TXRF analysis were investigated for some low Z elements such as C, N, O, Al, Mg and Na in two different detection geometries for various excitation modes. Compared to ordinary XRF geometries involving large incident angles, the background contributions in TXRF are drastically reduced by the total reflection of the incident beam at the polished surface of a flat specimen carrier such as a silicon wafer. For the sake of an application-oriented TXRF approach, droplet samples on Si wafer surfaces were prepared by Wacker Siltronic and investigated in the TXRF irradiation chamber of the Atominstitut and the ultra-high vacuum TXRF irradiation chamber of the PTB. In the latter, thin C layer depositions on Si wafers were also studied.