Advanced technology steps in the fabrication of GaAs microstrip detectors

We report on the fabrication of GaAs microstrip detectors with integrated coupling capacitors and biasing resistors. The characteristics of the dielectrica SiO 2 and Si 3N 4 are compared. The SiO 2 layers were fabricated by evaporation. The Si 3N 4 layers were grown by plasma enhanced vapour deposit...

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Bibliographic Details
Published in:Nuclear physics. Section B, Proceedings supplement Proceedings supplement, 1998-02, Vol.61 (3), p.438-441
Main Authors: Albertz, D., Braunschweig, W., Karpinski, W., Krais, R., Kubicki, Th, Lübelsmeyer, K., Rente, C., Syben, O., Tenbusch, F., Toporowski, M., Wittmer, B., Xiao, W.J.
Format: Article
Language:English
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Summary:We report on the fabrication of GaAs microstrip detectors with integrated coupling capacitors and biasing resistors. The characteristics of the dielectrica SiO 2 and Si 3N 4 are compared. The SiO 2 layers were fabricated by evaporation. The Si 3N 4 layers were grown by plasma enhanced vapour deposition. The IV-properties and the yield of the devices is investigated. First results of ion implanted back side contacts without an annealing step are presented.
ISSN:0920-5632
1873-3832
DOI:10.1016/S0920-5632(97)00599-9