Compensation mechanism in MOCVD and MBE grown GaN : Mg

We studied GaN grown by metal organic chemical vapour deposition (MOCVD) and molecular beam epitaxy doped with different Mg concentrations by photoluminescence, Hall and SIMS measurements. For the MOCVD samples, due to compensating deep donors a saturation of the hole density versus the Mg concentra...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2001-12, Vol.308, p.38-41
Main Authors: Alves, H., Böhm, M., Hofstaetter, A., Amano, H., Einfeldt, S., Hommel, D., Hofmann, D.M., Meyer, B.K.
Format: Article
Language:English
Subjects:
Compensating donors
GaN
Mg-acceptor
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Summary:We studied GaN grown by metal organic chemical vapour deposition (MOCVD) and molecular beam epitaxy doped with different Mg concentrations by photoluminescence, Hall and SIMS measurements. For the MOCVD samples, due to compensating deep donors a saturation of the hole density versus the Mg concentration is observed. These donors are also related to a 2.9 eV recombination observed in photoluminescence. Assuming that the compensating donors formed during growth processes involve nitrogen vacancies, hydrogen and a complex of both species, we are able to calculate the free hole concentration as a function of the Mg concentration for both growth methods.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(01)00663-9