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Expanded model for anharmonic vibrational excitation of oxygen in silicon

To consistently describe the infrared absorptions by the oxygen in silicon discovered previously (30-, 1100-,1200-, and 1700-cm −1 bands) and recently (600- and 1800-cm −1 bands), our original model for the two-dimensional low-energy excitation of oxygen coupled to the A 2u local mode has been expan...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2001-12, Vol.308, p.309-312
Main Author: Yamada-Kaneta, H.
Format: Article
Language:English
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Summary:To consistently describe the infrared absorptions by the oxygen in silicon discovered previously (30-, 1100-,1200-, and 1700-cm −1 bands) and recently (600- and 1800-cm −1 bands), our original model for the two-dimensional low-energy excitation of oxygen coupled to the A 2u local mode has been expanded so as to include the coupling to the A 1g local mode. In addition to the four unknown parameters contained in our original model, the expanded model contains two more parameters: the A 1g mode frequency and the A 1g-mode coupling constant⋅ Employing the set of appropriate basis functions of sufficient size, we calculated the Hamiltonian matrix and then diagonalized it numerically. We have found the parameter values that well reproduce the energy levels we previously determined up to one-A 2u-phonon plus one-A 1g-phonon states.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(01)00866-3