Donor–acceptor pair transitions in ZnO substrate material

We investigate the state-of-the-art ZnO substrate material grown by seeded chemical vapour transport. The low-temperature photoluminescence (PL) spectra are dominated by very sharp bound exciton lines, which are followed by two-electron satellite transitions. This identifies the major bound exciton...

Full description

Saved in:
Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2001-12, Vol.308, p.945-948
Main Authors: Thonke, K., Gruber, Th, Teofilov, N., Schönfelder, R., Waag, A., Sauer, R.
Format: Article
Language:English
Subjects:
Donor–acceptor pair transition
Two-electron satellite
ZnO
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigate the state-of-the-art ZnO substrate material grown by seeded chemical vapour transport. The low-temperature photoluminescence (PL) spectra are dominated by very sharp bound exciton lines, which are followed by two-electron satellite transitions. This identifies the major bound exciton lines as donor related and allows us to derive a binding energy of ≈40 meV for the very similar donors observed here. From a donor–acceptor pair transition at ≈3.22 eV and its associated band-acceptor line emerging at sample temperatures above 40 K, we calculate the acceptor binding energy as ≈195 meV. Hall data confirm these findings.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(01)00877-8