Incorporation of nitrogen in GaAsN and InGaAsN alloys investigated by FTIR and NRA

InGaAsN layers grown by molecular beam epitaxy were investigated using Fourier transform infrared absorption spectroscopy. The nitrogen-related local mode at 471 cm −1 is used as a quantitative tool to assess the substitutional nitrogen fraction. Evidence is presented that nitrogen in the quaternary...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2001-12, Vol.308, p.877-880
Main Authors: Alt, H.Ch, Egorov, A.Yu, Riechert, H., Meyer, J.D., Wiedemann, B.
Format: Article
Language:English
Subjects:
FTIR
InGaAsN
Nitrogen
NRA
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Summary:InGaAsN layers grown by molecular beam epitaxy were investigated using Fourier transform infrared absorption spectroscopy. The nitrogen-related local mode at 471 cm −1 is used as a quantitative tool to assess the substitutional nitrogen fraction. Evidence is presented that nitrogen in the quaternary alloy is bonded only to gallium atoms as in GaAsN. No change in the local environment of nitrogen is observed after annealing. From nuclear reaction analysis of GaAsN under channeling conditions it is confirmed that the major fraction of nitrogen atoms (>95%) is localized on string positions.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(01)00932-2