Overshoot velocity in ultra-broadband THz studies in GaAs and InP

• Published in: Physica. B, Condensed matter Condensed matter, 2002-03, Vol.314 (1), p.162-165
• Main Authors: Saraniti, M., Hu, Y., Goodnick, S.M., Wigger, S.J.
• Format: Article
• Language: English
• Subjects: Charge transport modeling; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; GaAs; General theory; Iii-v and ii-vi semiconductors; Infrared and raman spectra and scattering; InP; Microwave and radio-frequency interactions; Microwave and radio-frequency interactions (excluding resonances); Monte Carlo; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Other interactions of matter with particles and radiation; Physics; Theory, models, and numerical simulation
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/S0921-4526(01)01377-1

We model velocity overshoot in GaAs and InP using a fullband, particle-based device simulator based on the so-called cellular automaton method. This study has been motivated by the recent availability of experimental measures of the THz radiation generated by transient acceleration of photogenerated charge carriers in pin diode structures. The fullband code used in this study includes the full energy-momentum dispersion relation of electrons and holes as well as the full dispersion for the relevant phonons. Here we use this code for the simulation of high-field transient transport in bulk GaAs, InP, and for the experimental pin structure, where favorable comparison is found with the velocities measured from the transient THz radiation after ultrafast excitation.