Double resonance study of hole burning in self-assembled quantum dots

We present far-infrared (FIR) modulated photoluminescence measurements of self-assembled InAs/GaAs quantum dots. The sample was annealed to remove any indium profile roughness from within the quantum dots and thus from the inhomogeneous broadening. The annealed sample shows resonant FIR excitations...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2002-03, Vol.314 (1), p.474-476
Main Authors: Clarke, D.G., Pidgeon, C.R., Wells, J.-P.R., Bradley, I.V., Murray, R., Murdin, B.N.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Iii-v and ii-vi semiconductors
Infrared and raman spectra and scattering
Inhomogeneous broadening
Intraband transitions
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Quantum dots
Semiconductor compounds
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Summary:We present far-infrared (FIR) modulated photoluminescence measurements of self-assembled InAs/GaAs quantum dots. The sample was annealed to remove any indium profile roughness from within the quantum dots and thus from the inhomogeneous broadening. The annealed sample shows resonant FIR excitations just as the unannealed sample, but exhibits spectral hole burning unlike the unannealed sample. The results indicate that indium roughness is one of the primary inhomogeneous broadening mechanisms in self-assembled quantum dots.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(01)01413-2