Large grain size dependence of resistance of polycrystalline films

• Published in: Physica. B, Condensed matter Condensed matter, 2002-09, Vol.322 (3), p.289-296
• Main Authors: Arun, P, Tyagi, Pankaj, Vedeshwar, A.G
• Format: Article
• Language: English
• Subjects: Chalcogenides; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Ii-vi semiconductors; Materials science; Physics; Solid solution hardening, precipitation hardening, and dispersion hardening; aging; Solid solution, precipitation, and dispersion hardening; aging; Thin films; Treatment of materials and its effects on microstructure and properties
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/S0921-4526(02)01195-X

A qualitative behavior of grain size dependent resistance of polycrystalline films has been worked out by extending the earlier model (Volger's model) for polycrystalline films. Growth of grain size is considered to be accompanied with a decrease in the number of grains present. The variation of the number of grains is restricted along one direction at a time, assuming it to be constant along the other two directions, to simplify the problem. Combining the results along film thickness and film length, the calculated resistance versus grain size shows a family of curves. These curves can be used to know the growth direction by comparing the measured grain size dependence of the resistance.