Monte Carlo study on electron motion under mid-infrared free-electron-laser pulses

A full band Monte Carlo simulation for electron motion in a GaAs crystal under mid-infrared free-electron-laser (FEL) pulses is performed. Average electron energy and number of occurrence of impact ionization are calculated as a function of time for different wave-lengths of FEL pulses. The results...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 1999-12, Vol.272 (1), p.431-433
Main Authors: Mori, N, Nakano, H, Kubo, H, Hamaguchi, C, Eaves, L
Format: Article
Language:English
Subjects:
Free electron laser
Impact ionization
Monte Carlo simulation
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Summary:A full band Monte Carlo simulation for electron motion in a GaAs crystal under mid-infrared free-electron-laser (FEL) pulses is performed. Average electron energy and number of occurrence of impact ionization are calculated as a function of time for different wave-lengths of FEL pulses. The results are compared with the experimental observation of band-gap luminescence from a GaAs/AlGaAs asymmetric double-quantum-well structure.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(99)00361-0