OH-related emitting centers in interface layer of porous silicon

Photoluminescence and excitation spectra measurements as well as SIMS and FTIR techniques were used to investigate the photoluminescence excitation mechanism of porous silicon. It is shown that there are two types of photoluminescence excitation spectra which consist either of two, visible and ultra...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 1999-12, Vol.273-274, p.955-958
Main Authors: Torchynska, T.V, Sheinkman, M.K, Korsunskaya, N.E, Khomenkovan, L.Yu, Bulakh, B.M, Dzhumaev, B.R, Many, A, Goldstein, Y, Savir, E
Format: Article
Language:English
Subjects:
Photoluminescence
Photoluminescence excitation
Porous silicon
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Summary:Photoluminescence and excitation spectra measurements as well as SIMS and FTIR techniques were used to investigate the photoluminescence excitation mechanism of porous silicon. It is shown that there are two types of photoluminescence excitation spectra which consist either of two, visible and ultraviolet, or one, only ultraviolet, bands. The dependence of photoluminescence excitation spectra upon the various treatment (aging in vacuum, in air and in liquids) indicates that the excitation in the visible range occurs via light absorption of some species on the porous Si surface.
ISSN:0921-4526
1873-2135
DOI:10.1016/S0921-4526(99)00563-3