Effect of grown-in biaxial strain on deep level defects in Si1−C /Si epitaxial heterostructures

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 1999-12, Vol.273-274, p.681-684
Main Authors: Singh, D.V., Mitchell, T.O., Hoyt, J.L., Gibbons, J.F., Johnson, N.M., Götz, W.K.
Format: Article
Language:English
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ISSN:0921-4526
DOI:10.1016/S0921-4526(99)00603-1