Highly ordered nanostructures of single crystalline GaN nanowires in anodic alumina membranes

• Published in: Materials science & engineering. A, Structural materials : properties, microstructure and processing Structural materials : properties, microstructure and processing, 2000-06, Vol.286 (1), p.165-168
• Main Authors: Cheng, G.S., Chen, S.H., Zhu, X.G., Mao, Y.Q., Zhang, L.D.
• Format: Article
• Language: English
• Subjects: Clusters, nanoparticles, and nanocrystalline materials; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; GaN nanowires; Highly ordered nanostructure; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Physics; Structure of solids and liquids; crystallography; VLS growth
• ISSN: 0921-5093; 1873-4936
• DOI: 10.1016/S0921-5093(00)00630-4

Synthesis of highly ordered nanostructures of single crystalline GaN nanowires in anodic alumina membranes was achieved through a gas reaction of Ga 2O vapor with a constant ammonia atmosphere at 1000°C in the presence of nano-sized metallic indium catalysis. Atomic force microscopy, X-ray diffraction, Raman backscattering spectrum, scanning electron microscopy, and transmission electron microscopy indicate that the ordered nanostructure consists of the single crystalline hexagonal wurtzite GaN nanowires with about 20 nm in diameter and 40∼50 μm in length in the uniform nanochannels of the anodic alumina membrane. The vapor–liquid–solid (VLS) growth mechanism of the ordered nanostructure was discussed in detail.