Tunneling spectroscopy in quasicrystals

We present tunneling spectroscopy measurements for icosahedral i-AlPdRe, i-AlCuFe and approximant α-AlMnSi phases. We show that for both oxidized and bare surfaces the density of states (DOS) close to the Fermi level exhibits specific features for quasicrystals and approximants as compared with the...

Full description

Saved in:
Bibliographic Details
Published in:Materials science & engineering. A, Structural materials : properties, microstructure and processing Structural materials : properties, microstructure and processing, 1997-06, Vol.226, p.972-975
Main Authors: Davydov, D.N., Mayou, D., Berger, C., Gignoux, C., Jansen, A.G.M.
Format: Article
Language:English
Subjects:
Electron-electron interaction
Electronic density of states
Quasicrystals
Tunneling spectroscopy
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present tunneling spectroscopy measurements for icosahedral i-AlPdRe, i-AlCuFe and approximant α-AlMnSi phases. We show that for both oxidized and bare surfaces the density of states (DOS) close to the Fermi level exhibits specific features for quasicrystals and approximants as compared with the crystalline non approximant ω-AlCuFe phase. The Fermi energy lies in the middle of a narrow pseudo-gap of about 50 meV width. For higher energies, the DOS varies as the square root of energy, which is attributed to electron-electron interaction. The overall DOS differs from ab initio calculations and the possible roles of electron scattering and non homogeneous electronic structure close to the surface are discussed.
ISSN:0921-5093
1873-4936
DOI:10.1016/S0921-5093(96)10829-7