Spectroscopic evidence and control of compensating native defects in doped ZnSe

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2001-03, Vol.80 (1), p.168-172
• Main Authors: Irmscher, Klaus, Prokesch, Michael
• Format: Article
• Language: English
• Subjects: Color centers and other defects; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Doping; Electron paramagnetic resonance; Electron paramagnetic resonance and relaxation; Electron states; Exact sciences and technology; Ii-vi semiconductors; Impurity and defect levels; Magnetic resonances and relaxations in condensed matter, mössbauer effect; Physics; Self-compensation; ZnSe bulk crystals
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(00)00612-7

Electron paramagnetic resonance spectroscopy combined with photoexcitation is used to identify and characterise the defects responsible for the compensation in iodine or aluminium doped ZnSe bulk crystals. The principal g-values of the Al Zn V Zn complex are reported for the first time. The acceptor levels of both A-centres observed are determined at 0.50 and 0.54 eV above the valence band edge for I Se V Zn and Al Zn V Zn, respectively. Annealing of these samples in Zn vapour is shown to be suitable for reproducible adjustments of the electron concentration at room temperature up to a few 10 18 cm −3. The tight coupling of these vapour phase equilibrations with the electrical and spectroscopic analysis allows to propose a simple defect-chemical model.