MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates

GaN thin films of different hexagonal crystal structures have been grown by radio-frequency nitrogen plasma source molecular beam epitaxy (RFMBE) on vicinal (100) GaAs substrates. Polycrystalline hexagonal material occurred for high temperature (630°C) nitridation of the GaAs surface or low temperat...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.16-18
Main Authors: Georgakilas, A, Czigany, Zs, Amimer, K, Davydov, V.Yu, Toth, L, Pecz, B
Format: Article
Language:English
Subjects:
GaN
GaN on GaAs
MBE
Structure
TEM
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Summary:GaN thin films of different hexagonal crystal structures have been grown by radio-frequency nitrogen plasma source molecular beam epitaxy (RFMBE) on vicinal (100) GaAs substrates. Polycrystalline hexagonal material occurred for high temperature (630°C) nitridation of the GaAs surface or low temperatures of the initial GaN buffer layer deposition. On the contrary, initial GaN growth at 540°C gave hexagonal single crystals with [0001] axis either inclined at approximately 43° from the growth axis or aligned parallel to it. The GaN orientation depended on the annealing or not, respectively, of the initial low temperature buffer layer.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(00)00726-1