Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer

The electrical characteristics of the ITO/ZnO multilayers contacts on n-GaN have been investigated. Ohmic behavior and the measured special contact resistance of 3×10 −4 Ω cm 2 were achieved for the ITO/ZnO/GaN structure annealed at 500°C for 5 min in hydrogen ambient. These results could be attribu...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.259-261
Main Authors: Tang, Bang-Tai, Yu, Qing-Xuan, Lee, Hsin-Ying, Lee, Ching-Ting
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Contact resistance, contact potential
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
GaN
ITO
Multilayers
Ohmic contact
Physics
TLM
ZnO
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Summary:The electrical characteristics of the ITO/ZnO multilayers contacts on n-GaN have been investigated. Ohmic behavior and the measured special contact resistance of 3×10 −4 Ω cm 2 were achieved for the ITO/ZnO/GaN structure annealed at 500°C for 5 min in hydrogen ambient. These results could be attributed to the ITO/ n-ZnO/ n-GaN isotype conjunction and the quantum confinement effect in a thin ZnO buffer layer.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(00)00760-1