Annealing behavior of Pd/GaN (0001) microstructure

We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga 2Pd 5 and Ga 5Pd gallides in epitaxial re...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2001-05, Vol.82 (1), p.105-107
Main Authors: Kim, C.C., Je, J.H., Kim, D.W., Baik, H.K., Lee, S.M., Ruterana, Pierre
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Epitaxy
Exact sciences and technology
Gallide
Interface structure and roughness
Interfacial structure
Microstructure
Physics
Solid surfaces and solid-solid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga 2Pd 5 and Ga 5Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(00)00761-3