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Structural and electrical properties of MOCVD-cobalt silicide on p-Si0.83Ge0.17/Si(001)

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Bibliographic Details
Published in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2002-02, Vol.89 (1-3), p.279-283
Main Authors:	SHIN, D. O, AHN, Y. S, BAN, S. H, LEE, N.-E, AHN, B. T, KIM, S. H, SHIM, K.-H, KANG, J.-Y
Format:	Article
Language:	English
Subjects:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Materials science Methods of deposition of films and coatings film growth and epitaxy Other inorganic semiconductors Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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