The evaluation and control of quantum wells and superlattices of III–V narrow gap semiconductors

The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs 1 − x Sb x /InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs 1 − x Sb x /InAs...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1997-02, Vol.44 (1), p.260-265
Main Authors: Stradling, R.A., Chung, S.J., Ciesla, C.M., Langerak, C.J.M., Li, Y.B., Malik, T.A., Murdin, B.N., Norman, A.G., Phillips, C.C., Pidgeon, C.R., Pullin, M.J., Tang, P.J.P., Yuen, W.T.
Format: Article
Language:English
Subjects:
Quantum wells
Semiconductors
Superlattices
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Summary:The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs 1 − x Sb x /InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs 1 − x Sb x /InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(96)01742-4