Electrical properties of light-emitting devices based on the II–VI compounds BeTe and BeMgZnSe

Light-emitting diodes with BeMgZnSe cladding layers and an active region formed by a ZnSe, BeZnSe or BeZnSeTe single quantum well are characterized by means of current-voltage measurements and electroluminescence at room temperature. A longterm stability exceeding 4000 h has been estimated in first...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1997, Vol.43 (1), p.92-96
Main Authors: Fischer, F., Laubender, J., Lugauer, H.J., Litz, T., Weingärtner, A., Zehnder, U., Gerhard, T., Ossau, W., Schüll, K., Waag, A., Landwehr, G.
Format: Article
Language:English
Subjects:
Laser diodes
Molecular beam epitaxy
Semiconductors
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Summary:Light-emitting diodes with BeMgZnSe cladding layers and an active region formed by a ZnSe, BeZnSe or BeZnSeTe single quantum well are characterized by means of current-voltage measurements and electroluminescence at room temperature. A longterm stability exceeding 4000 h has been estimated in first experiments at low current densities (15 A cm −2). The emission wavelength was tuned between 452 and 518 nm by varying the composition of the quantum well material. Additionally, first results on the n-type doping of BeMgZnSe during molecular beam epitaxy have been obtained. The properties of ohmic contacts to n-type epilayers are discussed.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(96)01839-9