III–V nitride materials: an approach through amorphous GaAs1 − xNx thin films

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1997-01, Vol.43 (1-3), p.283-287
Main Authors: Lollman, D., Aguir, K., Bandet, J., Roumiguières, B., Carchano, H.
Format: Article
Language:English
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ISSN:0921-5107
DOI:10.1016/S0921-5107(96)01868-5