Ti/Ni ohmic contacts to n-type gallium nitride

We investigated Ti and Ni based contacts to find a metallization which is convenient for a self aligned technology such that the ohmic contact can be used as a mask at GaN plasma etching for light emitter fabrication. The contacts with lowest value of R cont = 1.1 × 10 −5 Ω cm −2 at current densitie...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1997, Vol.43 (1), p.292-295
Main Authors: Vassilevski, K.V., Rastegaeva, M.G., Babanin, A.I., Nikitina, I.P., Dmitriev, V.A.
Format: Article
Language:English
Subjects:
Dry etching
Gallium nitride
Ohmic contact
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Summary:We investigated Ti and Ni based contacts to find a metallization which is convenient for a self aligned technology such that the ohmic contact can be used as a mask at GaN plasma etching for light emitter fabrication. The contacts with lowest value of R cont = 1.1 × 10 −5 Ω cm −2 at current densities up to 30 kA cm −2 were formed on GaN layers having a donor concentration of ~1 × 10 18 cm −3. They demonstrated good thermal and chemical stability and were used as a mask for GaN etching in a CCl 2F 2/Ar plasma.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(96)01870-3