6H-3C SiC structures grown by sublimation epitaxy

The objective of the present work was to prepare heterojunctions in the 3C-6H system and to investigate their characteristics. The heteroepitaxy was carried out using sublimation epitaxy (SE) in an open system. The presence of 3C-SiC in the deposited structures was confirmed by X-ray diffraction. Th...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1997-04, Vol.46 (1), p.168-170
Main Authors: Lebedev, Alexander A., Savkina, Natalia S., Strel'chuk, Anatolii M., Tregubova, Alla S., Scheglov, Mikhail P.
Format: Article
Language:English
Subjects:
6H-3C structures
Sublimation epitaxy
X-ray diffraction
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Summary:The objective of the present work was to prepare heterojunctions in the 3C-6H system and to investigate their characteristics. The heteroepitaxy was carried out using sublimation epitaxy (SE) in an open system. The presence of 3C-SiC in the deposited structures was confirmed by X-ray diffraction. The p-n junction parameters were investigated from current-voltage and capacitance-voltage measurements, electroluminescence spectrum and DLTS data.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(96)01956-3