Growth of SiC ingots with high ratea

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1997-04, Vol.46 (1), p.296-299
• Main Authors: Dorozhkin, Sergei I., Avrov, Dmitri D., Rastegaev, Vladimir P., Tairov, Yuri M.
• Format: Article
• Language: English
• Subjects: Monocrystals; SiC ingots; Sublimation method
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(97)00006-8

The extended manufacturing of devices on the base of silicon carbide consumes big quantity of SiC substrates. Such tendency of development requires greater productivity of silicon carbide ingots growth. One solution to this problem can be an increase in the growth rate of SiC monocrystals. The maximum growth rate is 3.5 mm h −1. At the growth rate more than this value the crystals of silicon carbide were obtained with blocks and contained many inclusions. Ingots SiC of 4H and 6H polytypes with diameter up to 20 mm and length of 20 mm are obtained. It is necessary to note, that at growth on the plane (0001) C in 90% of cases polytype of the grown crystal was 4H, independently of substrate polytype. In the case of use for growth of the surface (0001) Si polytype of the ingot was 6H. Grown silicon carbide monocrystals had the following characteristics: the donor's concentration was 5 × 10 17 cm −3; the micropipes density was from 100 to 1000 cm −2.