Realization of silicon carbide sensors for measurements on gaseous working fluids

A series of temperature, pressure, as well as gas or liquid flow sensors, working under extreme service conditions like high temperature, hostile environments, radiation has been carried out on the basis of a unified silicon carbide (SiC) technology. The different step include performing a low-tempe...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1997-04, Vol.46 (1), p.383-386
Main Authors: Ballandovich, V.S., Bogachev, S.V., Il'yn, V.A., Korlyakov, A.V., Kostromin, S.V., Luchinin, V.V., Petrov, A.A.
Format: Article
Language:English
Subjects:
Electrical characterization
Gas and liquid flow sensor
Pressure sensor
SiC microtechnology
Temperature sensor
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Summary:A series of temperature, pressure, as well as gas or liquid flow sensors, working under extreme service conditions like high temperature, hostile environments, radiation has been carried out on the basis of a unified silicon carbide (SiC) technology. The different step include performing a low-temperature SiC epitaxy on an insulating substrate, performing a precise local dry etching using standard photoresist masks and achieving high-temperature contact fabrication. Details of these steps and corresponding applications are reviewed.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(97)00007-X