Radiation spectra in GaN-based LEDs under thermal-injection processes

The effects of series current magnitude ( I) upon the intrinsic UV luminescence band ( λ∼370 nm) and the impurity of the blue band ( λ∼430 nm) of a GaN LED has been investigated. The excess device temperature (Δ T AR) of the GaN LED active region has been determined over a wide range of working curr...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.319-321
Main Authors: Svechnikov, S.V, Oleksenko, P.Ph, Sukach, G.A, Smertenko, P.S, Vlaskina, S.I, Gromashevski, V.L
Format: Article
Language:English
Subjects:
Applied sciences
DAP and band–band recombination
Electronics
Exact sciences and technology
GaN LED
Light-emitting devices
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ultraviolet and light-blue radiation
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Summary:The effects of series current magnitude ( I) upon the intrinsic UV luminescence band ( λ∼370 nm) and the impurity of the blue band ( λ∼430 nm) of a GaN LED has been investigated. The excess device temperature (Δ T AR) of the GaN LED active region has been determined over a wide range of working currents. It has a linear behaviour for currents over 15 mA. The weaker dependence Δ T AR ( i) at i
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(97)00177-3