GaN-based laser diode with focused ion beam-etched mirrors

GaN-based MQWs-SCH laser diodes (LDs) with Fabry–Perot resonator mirrors fabricated by focused ion beam (FIB) etching were demonstrated for the first time. The diodes show lasing by pulsed current injection at room temperature with a lasing wavelength near 410 nm. FIB etching of the mirrors signific...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.382-385
Main Authors: Ambe, C., Takeuchi, T., Katoh, H., Isomura, K., Satoh, T., Mizumoto, R., Yamaguchi, S., Wetzel, C., Amano, H., Akasaki, I., Kaneko, Y., Yamada, N.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Fabry–Perot resonator mirrors
Focused ion beam etching
GaN-based laser diode
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:GaN-based MQWs-SCH laser diodes (LDs) with Fabry–Perot resonator mirrors fabricated by focused ion beam (FIB) etching were demonstrated for the first time. The diodes show lasing by pulsed current injection at room temperature with a lasing wavelength near 410 nm. FIB etching of the mirrors significantly reduced the threshold current from 1.25 to 0.75 A. In addition we studied the dependence of I-L characteristics on the successive rotation of the etched mirror of a single device and found a strong angular dependence. A similar study of the tilting angle revealed a very weak variation.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(98)00349-3