High speed growth of device quality GaN and InGaN by RF-MBE

A high-speed growth (1.2–1.4 μm h −1) of device-quality GaN epitaxial layers was demonstrated by molecular beam epitaxy using RF radical nitrogen (RF-MBE). The migration enhanced epitaxy (MEE) growth of GaN was investigated. For undoped GaN, the room temperature (RT) PL-FWHM of 31 meV and the residu...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1999-05, Vol.59 (1), p.65-68
Main Authors: Kushi, Kouichi, Sasamoto, Hajime, Sugihara, Daisuke, Nakamura, Shinichi, Kikuchi, Akihiko, Kishino, Katsumi
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
GaN
InGaN
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Migration enhanced epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Multi quantum wells
Physics
rf-Plasma
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Summary:A high-speed growth (1.2–1.4 μm h −1) of device-quality GaN epitaxial layers was demonstrated by molecular beam epitaxy using RF radical nitrogen (RF-MBE). The migration enhanced epitaxy (MEE) growth of GaN was investigated. For undoped GaN, the room temperature (RT) PL-FWHM of 31 meV and the residual carrier density of 2.6×10 16 cm −3 were obtained. The light emitting diode (LED) structures with InGaN/GaN MQW active layers were grown with a growth rate of 1.33 μm h −1. Green (567 nm) to blue (460 nm) range emissions were observed at RT under current injection.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(98)00365-1