Influence of the heating ramp on the heteroepitaxial growth of SiC on Si

The influence of the heating rate on the initial growth of SiC on silicon by carbonization was investigated for two strongly differing methods: solid source molecular beam epitaxy and rapid thermal chemical vapour deposition. An improvement of the structural and morphological properties can be obtai...

Full description

Saved in:
Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1999-07, Vol.61, p.553-558
Main Authors: Cimalla, V, Stauden, Th, Eichhorn, G, Pezoldt, J
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The influence of the heating rate on the initial growth of SiC on silicon by carbonization was investigated for two strongly differing methods: solid source molecular beam epitaxy and rapid thermal chemical vapour deposition. An improvement of the structural and morphological properties can be obtained by a two dimensional nucleation stimulated by a defined heating cycle in a (hydro-) carbon flux. This improvement is strongly associated with a decreased diffusion coefficient for silicon through the grown layer.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(98)00472-3