High temperature growth of AlN by plasma-enhanced molecular beam epitaxy

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1999-12, Vol.67 (1), p.80-87
• Main Authors: Fan, Z.Y, Rong, G, Browning, J, Newman, N
• Format: Article
• Language: English
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(99)00213-5

AlN(0001) films have been grown by plasma-enhanced molecular beam epitaxy on sapphire(0001) surfaces utilizing monoenergetic activated-nitrogen beams at elevated substrate temperatures (900–1300°C). AlN films synthesized under stoichiometric conditions, with ECR microwave powers of less than 100 W, substrate temperatures of 925–1150°C and a low temperature buffer layer exhibit narrow X-ray diffraction rocking curve widths [6 arcmin, AlN(0002)]. Smooth surface morphologies with typical RMS surface roughness of ∼l5 Å are found for ∼1 μm AlN growth when the lower range of substrate temperatures are used. The φ-scan of the AlN 10 1 ̄ 3 X-ray Bragg reflection has six-fold symmetry with peak widths of 1.6°, indicating that the highest quality films are aligned, albeit with small angle grain boundaries in the a- b plane. Lattice constants of 3.079 Å ( a) and 5.036 Å ( c) are inferred from the X-ray diffraction data, indicating a bi-axial compressive strain of 1.03% in the a-b plane. Even smoother surfaces with an RMS roughness ∼6 Å can be produced if pre-growth surface nitridation is eliminated. In that case, degradation in the AlN thin-film crystal quality is found, as judged by the 24 arcmin rocking curve widths. The influence of growth conditions (i.e. substrate temperature, ratio of activated-nitrogen to Al flux, ion kinetic energy, pre-growth sapphire nitridation and the properties of the buffer layer) on the resulting crystal quality and surface morphology are directly addressed.