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Metallisation induced electron traps in epitaxially grown n-type GaN

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Bibliographic Details
Published in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2000-02, Vol.71 (1-3), p.77-81
Main Authors:	AURET, F. D, GOODMAN, S. A, MEYER, W. E, KOSCHNICK, F. K, SPAETH, J.-M, BEAUMONT, B, GIBART, P
Format:	Article
Language:	English
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Iii-v semiconductors Impurity and defect levels Physics Surface double layers, schottky barriers, and work functions
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