Radiation induced defects in MOVPE grown n-GaN

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2000-02, Vol.71 (1-3), p.100-103
Main Authors: GOODMAN, S. A, AURET, F. D, KOSCHNICK, F. K, SPAETH, J.-M, BEAUMONT, B, GIBART, P
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Electron states
Exact sciences and technology
Iii-v semiconductors
Impurity and defect levels
Physics
Radiation effects on specific materials
Semiconductors
Structure of solids and liquids
crystallography
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ISSN:0921-5107
1873-4944
DOI:10.1016/s0921-5107(99)00357-8