Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology

The aim of the report is a creation of extremely thin silicon-on-insulator (SOI) structures for quantum devices with layer-by-layer oxidation of smart-cut SOI wafers. The present work deals with investigation of structural, optical and electronic properties of SOI structures by HRTEM, RBS, and spect...

Full description

Saved in:
Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2000-04, Vol.73 (1), p.82-86
Main Authors: Popov, V.P, Antonova, I.V, Stas, V.F, Mironova, L.V, Gutakovskii, A.K, Spesivtsev, E.V, Mardegzhov, A.S, Franznusov, A.A, Feofanov, G.N
Format: Article
Language:English
Subjects:
Flatness
Oxidation
SOI
Ultrathin layer
Uniformity
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The aim of the report is a creation of extremely thin silicon-on-insulator (SOI) structures for quantum devices with layer-by-layer oxidation of smart-cut SOI wafers. The present work deals with investigation of structural, optical and electronic properties of SOI structures by HRTEM, RBS, and spectroscopic ellipsometry (SE), Hall and Pseudo-MOSFET measurements. It is demonstrated that this technology of SOI structure preparation provides a high flatness of interface between buried oxide (BOX) and top silicon layer. Layer-by-layer oxidation with subsequent stripping in diluted HF allows us to save the uniformity and flatness of initial SOI layers up to 10 nm film thickness. A further thinning leads to decrease of oxidation rate and non-uniform growth. A mechanism of these processes is suggested.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(99)00437-7