Effects of low dimensions on junction parameters of MOS devices

The electrical properties of the drain–substrate diode of submicronic devices are shown to be related to the device geometrical structure. The analysis takes into account two-dimensional edge effects. Intrinsic parameters are extracted from current–voltage characteristics and obtained dependant on t...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2000-05, Vol.74 (1), p.286-288
Main Authors: de la Bardonnie, M, Toufik, N, El-Tahchi, M, Pelanchon, F, Mialhe, P
Format: Article
Language:English
Subjects:
Applied sciences
Characterization
Electronics
Exact sciences and technology
Junction
MOSFET
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Submicronic
Transistors
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Summary:The electrical properties of the drain–substrate diode of submicronic devices are shown to be related to the device geometrical structure. The analysis takes into account two-dimensional edge effects. Intrinsic parameters are extracted from current–voltage characteristics and obtained dependant on the gate length and width. A degradation of the electrical properties is discussed and edge effects are related to small gate surface.
ISSN:0921-5107
1873-4944
DOI:10.1016/S0921-5107(99)00577-2