Fabrication technology for miniaturization of the spin-valve transistor

• Published in: Sensors and actuators. A, Physical Physical, 2001-06, Vol.91 (1), p.166-168
• Main Authors: Kim, S.D, van’t Erve, O.M.J, Jansen, R, Anil Kumar, P.S, Vlutters, R, Lodder, J.C
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; CPP; Electronics; Exact sciences and technology; Giant magnetoresistance; Hot electrons; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Magnetic components, instruments and techniques; Magnetic properties and materials; Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics; Magnetometers for susceptibility, magnetic moment and magnetization measurements; Magnetotransport phenomena, materials for magnetotransport; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Spin valve; Transistor
• ISSN: 0924-4247; 1873-3069
• DOI: 10.1016/S0924-4247(01)00518-0

A new fabrication technology that allows miniaturization of the spin-valve transistor is presented. The spin-valve transistor consists of a spin-valve base (Pt 2 nm/NiFe 3 nm/Au 3.5 nm/Co 3 nm/Au 4 nm) sandwiched between a Si emitter and collector. With the use of a silicon-on-insulator wafer and vacuum metal bonding, spin-valve transistors down to a few tens of micron size are realized through conventional photolithography and etching processes. These spin-valve transistors show 275% magnetocurrent at 87 K and 170% at room temperature in small magnetic fields.