High-quality GaAs-related lateral junctions on Si by conformal growth

Conformal growth consists in a confined lateral selective epitaxy of III–V materials on silicon from III–V oriented seeds, the vertical growth being stopped by an overhanging dielectric mask. Low-dislocation density (a few 10 4 cm −2 ) GaAs conformal layers can then be achieved exhibiting vertical {...

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Bibliographic Details
Published in:Optical materials 2001-06, Vol.17 (1), p.267-270
Main Authors: Gil-Lafon, E., Videcoq, A., Napierala, J., Castelluci, D., Pimpinelli, A., Gérard, B., Jimenez, J., Avella, M.
Format: Article
Language:English
Subjects:
Conformal epitaxy
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
GaAs/Si
HVPE
Lateral modulation
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
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Summary:Conformal growth consists in a confined lateral selective epitaxy of III–V materials on silicon from III–V oriented seeds, the vertical growth being stopped by an overhanging dielectric mask. Low-dislocation density (a few 10 4 cm −2 ) GaAs conformal layers can then be achieved exhibiting vertical {1 1 0} or inclined {1 1 1} mono-facetted growth fronts. New n (Si) and p (Zn) doped, laterally modulated GaAs structures were grown on Si by hydride vapour phase epitaxy (HVPE) using the conformal growth technique. The doping distribution was studied using spatially resolved cathodoluminescence (CL) and Micro-Raman spectroscopy. The feasibility of the conformal growth technique for selective doping was demonstrated and a first lateral n/p junction was characterised.
ISSN:0925-3467
1873-1252
DOI:10.1016/S0925-3467(01)00050-7