Red-shift of stimulated emission in ZnSe-based semiconductors

A red-shift in the stimulated emission wavelength with increasing intensity is observed using picosecond laser excitation of molecular-beam-epitaxial ZnSe epilayers and ZnSe-based quantum-well structures. This red-shift occurs across a wide temperature range (4–300 K) and for a wide range of epilaye...

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Bibliographic Details
Published in:Optical materials 1998-07, Vol.10 (3), p.235-240
Main Authors: Higgs, C., Blewett, I.J., Galbraith, I., Gallaher, N.R., Kar, A.K., Wherrett, B.S.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser materials
Optical materials
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optics
Physics
Stimulated emission
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Summary:A red-shift in the stimulated emission wavelength with increasing intensity is observed using picosecond laser excitation of molecular-beam-epitaxial ZnSe epilayers and ZnSe-based quantum-well structures. This red-shift occurs across a wide temperature range (4–300 K) and for a wide range of epilayer and quantum-well samples. We show that sample heating is not the origin of this shift. A variety of emission mechanisms are discussed but none provides a complete description of the observed experimental trends.
ISSN:0925-3467
1873-1252
DOI:10.1016/S0925-3467(97)00174-2