Preparation and characterization of MOCVD thin films of indium tin oxide

• Published in: Optical materials 1999-11, Vol.13 (2), p.255-259
• Main Authors: Akinwunmi, O.O, Eleruja, M.A, Olowolafe, J.O, Adegboyega, G.A, Ajayi, E.O.B
• Format: Article
• Language: English
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity); Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physics
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/S0925-3467(98)00089-5

Indium Tin Oxide (ITO) was deposited by pyrolysis of mixed metal acetylacetonate (a single solid-source precursor). This study demonstrates that the properties of the as-deposited film depend on the deposition temperature. Films with a resistivity of 7.2×10 −4 Ω cm , a visible transmission of over 80%, and a direct optical energy gap of 3.76 eV were deposited.