V/III ratio and silicon doping effects on the properties of In1−xGaxP/GaAs grown by solid source molecular beam epitaxy

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Bibliographic Details
Published in:Optical materials 2000-03, Vol.14 (1), p.59-68
Main Authors: Yoon, S.F, Mah, K.W, Zheng, H.Q
Format: Article
Language:English
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ISSN:0925-3467
DOI:10.1016/S0925-3467(99)00086-5